High-sensitivity Hall sensors using GaInAs/AlInAs pseudomorphic heterostructures

Application of Graphene in Development of High-sensitivity Hall-effect Sensors

Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe

The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. A novel method of quartz tuning fork atomic force microscopy feedback has been used which provides extremely simple operation in atmospheric pressures, high-vacuum, and var...

High-sensitivity acoustic sensors from nanofibre webs

Considerable interest has been devoted to converting mechanical energy into electricity using polymer nanofibres. In particular, piezoelectric nanofibres produced by electrospinning have shown remarkable mechanical energy-to-electricity conversion ability. However, there is little data for the acoustic-to-electric conversion of electrospun nanofibres. Here we show that electrospun piezoelectric...

Hall Sensors for Extreme Temperatures

We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends from -270 °C to +300 °C. The extreme-temperature Hall-sensor active element is a heavily n-doped ...

PSEUDOMORPHIC AND RELAXED GeSi:Si HETEROSTRUCTURES FORMED BY ION IMPLANTATION FOR HETEREPITAXIAL TEMPLATES

A method of forming Ge xSi1-x films by thermal oxidation of Ge -implanted Si is presented. The process involves the segregation of the implanted Ge during oxidation to form a distinct Ge -rich layer at the oxide interface. The composition of the segregated layer can be altered by varying the oxidation conditions as a result of the kinetic competition between oxidation and the interdiffusion of ...